Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules
TOKYO, June 1, 2023
- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD), 1 which the company has applied in a 3.3 kV full SiC power module, the FMF 800 DC -66 BEW2 for large industrial equipment such as railways and DC power systems. Samples began shipping on May 31.
To view the complete content, please log in.