Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module
2023-05-09
TOKYO, May 8, 2023 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module, featuring dual-type 3.3kV withstand voltage and 6.0kVrms dielectric strength, on May 31.
