Mitsubishi Electric to Expand Range of Ku-band GaN-HEMT Lineup

TOKYO, December 22, 2022 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 12.75-13.25 GHz (Low-Ku band) 70W (48.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two GaN HEMT products, one for multi-carrier1 communications and the other for single-carrier2 communications, support increased data-transmission capacity and smaller earth stations even in the Low-Ku band. The two products will be launched on January 15, 2023.