Highly durable silicon carbide (SiC) power semiconductor "TED-MOS" for energy saving in electric vehicle motors

Hitachi, Ltd. (TSE: 6501, Hitachi) today announced the development of an original energy saving power semiconductor structure,*1 "TED-MOS*2" using next-generation silicon carbide (SiC) material that contributes to saving energy in electric vehicles (EV). This power semiconductor is a new device using a fin-structured trench MOSFET*3*4 based on the conventional DMOS-FET*5, a SiC transistor of power semiconductor.